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| WSB1151 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT AMPLIFIER Low Collector Saturation Voltage Complement to WSD1691 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation(Tc=25) Collector Power Dissipation(Ta=25) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC PC Tj Tstg (Ta=25) Value -60 -60 -7 -5.0 -8.0 20 1.3 150 -55~ +150 Unit V V V A A W W 1. Emitter 2. Collector 3. Base 1 2 3 ELECTRICAL CHARACTERISTICS Characteristic Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn on Time Symbol ICBO IEBO hFE1 #hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF (Ta=25, unless otherwise specified) Test Condition VCB=-50V ,IE=0 VEB=-7V ,IC=0 VCE=-1V ,IC=-100mA VCE=-1V ,IC=-2.0A VCE=-2V, IC=-5.0A IC=-2A, IB=-200mA IC=-2A, IB=-200mA IC=-2.0A, RL=5 IB1=-IB2=200mA, VCC=-10V Min TYP MA X -10 -10 Unit 60 100 50 200 400 V V -0.14 -0.3 -0.9 0.15 0.78 0.18 -1.2 1 2.5 1 Storage Time Fall Time * Pulse Test :PW=350 ,Duty Cycle=2% Pulsed # hFE(2) Classification: Classification hFE O 100~200 Y 160~320 G 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2 WSB1151 Static Characteristics -12 -10 DC Current Gain 1000 VCE=-2V IB=-200mA 300 hFE ,DC Current Gain Ic, Collector Current, A VBE(sat) VCE(sat),Saturation Voltage,V Pc(W),Power Dissipation -8 -6 IB=-100mA IB=-60mA IB=-30mA IB=-20mA IB=-10mA 0 -0.4 -0.8 -1.2 100 30 10 -4 -2 -1.6 -2.0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Vce,Collector-Emitter Voltage ,V IC,Collector Current ,A Base Emitter Saturation Voltage Collector Emitter Saturation Voltage IC=10IB 1000 Current Gain-Bandwidth Product VCE=-5V Current Gain Bandwidth Product,fT(MHZ) - 300 100 50 30 10 -1000 VBE(sat) -100 -10 VCE(sat) 1 -1 -10 -100 -1000 -2000 -0.01 -0.1 -1 -2 IC,Collector Current,mA IC,Collector Current,A -10 Power Derating 30 20 15 Safe Operating Area Ic Max(Pulse) 100uS 1mS -3 10mS Ic Max(DC) -1 Ic(A)Collector Current 10 5 -0.3 -0.1 50 100 150 200 250 -0.01 -1 -3 -10 -30 -100 -300 -1000 Tc(), Case Temperature VCE(V),Collector Emitter Voltage JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2 |
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